• DocumentCode
    1110081
  • Title

    Reverse breakdown in GaAs MESFET´s

  • Author

    Zaitlin, Mark P.

  • Author_Institution
    Raytheon Company, Lexington, MA
  • Volume
    33
  • Issue
    11
  • fYear
    1986
  • fDate
    11/1/1986 12:00:00 AM
  • Firstpage
    1635
  • Lastpage
    1639
  • Abstract
    A simple numerical technique for calculating reverse breakdown voltage in GaAs MESFET´s is described. The breakdown voltage is determined from an integral over the ionization rate and requires only a small amount of computing time, allowing a variety of structures to be studied. The effects of a gate recess and n+layer, the surface potential, buried channel layers, and AlGaAs spacer layers underneath the gate are investigated.
  • Keywords
    Dielectric breakdown; Doping; Electric breakdown; FETs; Gallium arsenide; Geometry; Ionization; MESFETs; Poisson equations; Semiconductor process modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22721
  • Filename
    1485938
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1110081