DocumentCode :
1110093
Title :
Class E RF tuned power amplifiers in CMOS technologies: theory and circuit design considerations
Author :
Tu, Steve Hung-Lung
Author_Institution :
Fu Jen Catholic Univ., Taipei, Taiwan
Volume :
42
Issue :
9
fYear :
2004
Lastpage :
11
Abstract :
The article introduces several configurations of class E power amplifiers in CMOS technologies. Each configuration, however, alleviates some problems in the design of class E power amplifiers. The two-stage class E power amplifier reveals the design technique for the driving stage, which provides a more efficient driving signal in terms of class E operation. The complementary configuration takes advantage of the symmetrical circuit topology, which allows much lower total harmonic distortion in the output signal. The power-adaptive technique based on high-Q varactors gives a more feasible and effective approach to achieving the function of output power control for switching-mode power amplifiers. An approach to implement linear power amplification using switching mode power amplifiers is also introduced that can achieve linear amplification while still keeping high power efficiency and output power.
Keywords :
CMOS integrated circuits; harmonic distortion; integrated circuit design; network topology; personal communication networks; power amplifiers; switching circuits; varactors; CMOS technologies; circuit design; circuit topology; class E RF tuned power amplifiers; harmonic distortion; high-Q varactors; linear power amplification; output power control; power-adaptive technique; switching-mode power amplifiers; CMOS technology; Circuit synthesis; Circuit topology; High power amplifiers; Operational amplifiers; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Signal design;
fLanguage :
English
Journal_Title :
Communications Magazine, IEEE
Publisher :
ieee
ISSN :
0163-6804
Type :
jour
DOI :
10.1109/MCOM.2004.1336718
Filename :
1336718
Link To Document :
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