• DocumentCode
    111014
  • Title

    A Highly Integrated 1-Bit Phase Shifter Based on High-Pass/Low-Pass Structure

  • Author

    In Sang Song ; Giwan Yoon ; Chul Soon Park

  • Author_Institution
    Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
  • Volume
    25
  • Issue
    8
  • fYear
    2015
  • fDate
    Aug. 2015
  • Firstpage
    523
  • Lastpage
    525
  • Abstract
    This letter presents a highly integrated 1-bit 90 ° phase shifter based on high-pass/low-pass structure for 60 GHz beamforming applications using a standard 65 nm CMOS process. In order to overcome the limitation of the conventional low-pass only phase shifter, the combination of high-pass/low-pass network was utilized as a 1-bit phase shifter. By integrating a high pass network into the low-pass network with low loss single-pole single throw (SPST) switches that adapt a resistive body floating technique, the proposed phase shifter achieves average 5 dB IL and less than ±0.18 dB of insertion loss flatness and 1 dB rms amplitude error over the whole band in a small chip area of 0.16 mm 2 including pads.
  • Keywords
    CMOS integrated circuits; array signal processing; millimetre wave phase shifters; switches; CMOS process; SPST switch; amplitude error; beamforming application; complementary metal oxide semiconductor; frequency 60 GHz; high-pass structure; insertion loss; low-pass structure; phase shifter; resistive body floating technique; single-pole single throw switch; size 65 nm; word length 1 bit; CMOS integrated circuits; Inductors; Insertion loss; Millimeter wave technology; Phase measurement; Phase shifters; Wireless communication; 60 GHz; Beamforming; CMOS; phase shifter;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2015.2440777
  • Filename
    7131586