DocumentCode :
1110320
Title :
High-frequency noise measurements on FET´s with small dimensions
Author :
Abidi, A.A.
Author_Institution :
University of California, Los Angeles, CA
Volume :
33
Issue :
11
fYear :
1986
fDate :
11/1/1986 12:00:00 AM
Firstpage :
1801
Lastpage :
1805
Abstract :
A low-noise high-frequency transresistance amplifier has been used to accurately measure broad-band noise in MOSFET\´s with small widths and submicrometer channel lengths. The technique allows noise characterization up to frequencies of 100 MHz of the small devices available as process test arrays from different fabrication lines. The noise in the different portions of the 
characteristics of submicrometer MOSFET\´s has been characterized and shown to be greater by factors of 2 to 4 than the noise expected from long-channel noise theory.
characteristics of submicrometer MOSFET\´s has been characterized and shown to be greater by factors of 2 to 4 than the noise expected from long-channel noise theory.Keywords :
FETs; Fabrication; Integrated circuit noise; Low-noise amplifiers; MOSFET circuits; Noise measurement; Optical noise; Semiconductor device measurement; Testing; Working environment noise;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22743
Filename :
1485960
Link To Document :
