Title :
Charge control mechanism in MODFET´s: A theoretical analysis
Author :
Khondker, A.N. ; Anwar, A.F.M. ; Islam, M.A. ; Limoncelli, L. ; Wilson, D.
Author_Institution :
Clarkson University, Potsdam, NY
fDate :
11/1/1986 12:00:00 AM
Abstract :
A new approach to the theory of the charge control mechanism in modulation-doped transistors (MODFET´s) is presented. The present theory takes into account quantum mechanical results for the average separation of the two-dimensional electron gas from the Al1-xGaxAs/GaAs interface. A physical interpretation to the effective thickness of the input capacitor is also discussed.
Keywords :
Channel bank filters; Electrons; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MODFETs; Quantum mechanics; Voltage control; Wave functions;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22748
