• DocumentCode
    1110405
  • Title

    Calculation of the two-dimensional electron gas density at the AlxGa1-xAs/GaAs heterointerface

  • Author

    Park, Kwangmean ; Kwack, Kae Dal

  • Author_Institution
    Hanyang University, Seoul, Korea
  • Volume
    33
  • Issue
    11
  • fYear
    1986
  • fDate
    11/1/1986 12:00:00 AM
  • Firstpage
    1831
  • Lastpage
    1832
  • Abstract
    Using the Fermi-Dirac statistics and the numerical calculation method, the two-dimensional electron gas density at the unbiased semi-infinite AlxGa1-xAs/GaAs heterointerface is calculated. With the donor concentration, the undoped AlxGa1-xAs layer thickness, the temperature, and some parameters dependent on the Al mole fraction, the results of the numerical calculation show that this brief describes well the characteristics at the heterointerface, and they are in good agreement with the experimental data.
  • Keywords
    Accuracy; Artificial intelligence; Dielectric constant; Electrons; Gallium arsenide; Impurities; Ionization; Poisson equations; Statistics; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22751
  • Filename
    1485968
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1110405