• DocumentCode
    1110457
  • Title

    Comparative logic ratings for current high-speed field-effect transistors

  • Author

    Giacoletto, L.J.

  • Author_Institution
    Michigan State University, East Lansing, MI
  • Volume
    33
  • Issue
    11
  • fYear
    1986
  • Firstpage
    1835
  • Lastpage
    1836
  • Abstract
    The recent publication of the IEEE Transactions on Electron Devices ´Special Issue on Heterojunction Field-Effect Transistors´ (HFETs) (vol. ED-33, May 1986) has described the latest in high-speed transistors. The question arises as to which technique and fabrication technology is currently #1 in the high-speed race. The techniches are presented in tabular form and each is compared and contrasted.
  • Keywords
    Fabrication; HEMTs; Heterojunctions; MODFETs; Special issues and sections;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22755
  • Filename
    1485972