Title :
Comparative logic ratings for current high-speed field-effect transistors
Author :
Giacoletto, L.J.
Author_Institution :
Michigan State University, East Lansing, MI
Abstract :
The recent publication of the IEEE Transactions on Electron Devices ´Special Issue on Heterojunction Field-Effect Transistors´ (HFETs) (vol. ED-33, May 1986) has described the latest in high-speed transistors. The question arises as to which technique and fabrication technology is currently #1 in the high-speed race. The techniches are presented in tabular form and each is compared and contrasted.
Keywords :
Fabrication; HEMTs; Heterojunctions; MODFETs; Special issues and sections;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22755
