DocumentCode :
1110482
Title :
IIA-1 scaling and transient properties of high electron mobility transistors
Author :
Kizilyalli, Isik C. ; Hess, K. ; Larson, J.L.
Volume :
33
Issue :
11
fYear :
1986
fDate :
11/1/1986 12:00:00 AM
Firstpage :
1838
Lastpage :
1838
Keywords :
Electron mobility; HEMTs; Laboratories; Low-noise amplifiers; MODFETs; Millimeter wave measurements; Millimeter wave transistors; Motion pictures; Noise figure; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22758
Filename :
1485975
Link To Document :
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