• DocumentCode
    1110511
  • Title

    IIA-6 modulation-doped field-effect transistors utilizing superlattice AlGaAs/n+-GaAs charge-control layers

  • Author

    Arch, D.K. ; Abrokwah, J.K. ; Vold, P.J. ; Fraasch, A.M. ; Shur, Michael S. ; Xu, Jie

  • Volume
    33
  • Issue
    11
  • fYear
    1986
  • fDate
    11/1/1986 12:00:00 AM
  • Firstpage
    1839
  • Lastpage
    1840
  • Keywords
    Epitaxial layers; FETs; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFET circuits; Power dissipation; Superlattices; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22761
  • Filename
    1485978
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1110511