مرکز منطقه ای اطلاع رساني علوم و فناوري - IIB-1 1.25-µm buried-oxide SOI/CMOS process for 16K/64K SRAMS

DocumentCode :

1110526

Title :

IIB-1 1.25-µm buried-oxide SOI/CMOS process for 16K/64K SRAMS

Author :

Chen, Chiao-En ; Matloubian, M. ; Mao, B.-Y. ; Sundaresan, R. ; Slawinski, C. ; Lam, H.W. ; Hite, L.R. ; Hester, R.K.

Volume :

Issue :

fYear :

1986

fDate :

11/1/1986 12:00:00 AM

Firstpage :

1840

Lastpage :

1841

Keywords :

CMOS process; CMOS technology; Fabrication; Implants; MOSFETs; Nitrogen; Process design; Random access memory; Silicon; Substrates;

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/T-ED.1986.22763

Filename :

1485980

Link To Document :