• DocumentCode
    1110580
  • Title

    IIB-4 a high-speed, low-power buried-oxide SOI CMOS technology

  • Author

    Colinge, J.P. ; Kamins, Theodore I. ; Chiang, S.Y. ; Liu, Deming ; Peng, S. ; Rissman, P. ; Hashimoto, Koji

  • Volume
    33
  • Issue
    11
  • fYear
    1986
  • fDate
    11/1/1986 12:00:00 AM
  • Firstpage
    1842
  • Lastpage
    1842
  • Keywords
    Annealing; CMOS technology; Circuit testing; Lithography; MOSFETs; Research and development; Ring oscillators; Telecommunications; Titanium; Voltage-controlled oscillators;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22768
  • Filename
    1485985
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1110580