Title :
IIB-6 lateral solid phase epitaxy in partially doped Si amorphous layers onto silicon dioxide
Author :
Ishiwara, Hiroshi ; Furukawa, S. ; Tanaka, Mitsuru ; Ohta, K.
fDate :
11/1/1986 12:00:00 AM
Keywords :
Amorphous materials; Annealing; Epitaxial growth; Fabrication; Insulation; Semiconductor films; Silicon compounds; Silicon on insulator technology; Solids; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22769
