IIB-5 Characteristics of thin film poly-Si MOSFET´s as a function of process conditions and high field stress

Author

Rodder, M. ; Antoniadis, Dimitri A. ; Scholz, F. ; Kalnitsky, Alex

Volume

Issue

fYear

1986

fDate

11/1/1986 12:00:00 AM

Firstpage

1842

Lastpage

1842

Keywords

Amorphous materials; Degradation; Epitaxial growth; Leakage current; Semiconductor films; Solids; Stress; Telecommunications; Transistors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1986.22770

Filename

1485987

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