New Output Combiner for Doherty Amplifiers

Author

Giofre, R. ; Colantonio, P. ; Giannini, F. ; Piazzon, L.

Author_Institution

Electron. Eng. Dept., Univ. of Roma Tor Vergata, Rome, Italy

Volume

23

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

31

Lastpage

33

Abstract

In this letter, a new output combining network for the implementation of a Doherty Power Amplifier (DPA) is presented. The proposed topology simultaneously allows the active load modulation and the output matching, by adopting more realizable elements than the standard DPA, especially when high output power levels are required. The innovative design approach is demonstrated through a practical prototype realization based on GaN-HEMT devices. Experimental results have shown a 65%-48% efficiency at about 42-36 dBm output power with a gain compression lower than 1.5 dB from 1.95 to 2.25 GHz.

Keywords

III-V semiconductors; UHF power amplifiers; gallium compounds; high electron mobility transistors; network topology; wide band gap semiconductors; Doherty power amplifier; GaN; HEMT device-based practical prototype realization; active load modulation; frequency 1.95 GHz to 2.25 GHz; gain compression; high output power levels; output combining network; output matching; standard DPA; Gain; Impedance; Modulation; Power generation; Standards; Topology; Wireless communication; Doherty power amplifier (DPA); GaN; WiMAX;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2012.2236308

Filename

6400265