DocumentCode :
111062
Title :
New Output Combiner for Doherty Amplifiers
Author :
Giofre, R. ; Colantonio, P. ; Giannini, F. ; Piazzon, L.
Author_Institution :
Electron. Eng. Dept., Univ. of Roma Tor Vergata, Rome, Italy
Volume :
23
Issue :
1
fYear :
2013
fDate :
Jan. 2013
Firstpage :
31
Lastpage :
33
Abstract :
In this letter, a new output combining network for the implementation of a Doherty Power Amplifier (DPA) is presented. The proposed topology simultaneously allows the active load modulation and the output matching, by adopting more realizable elements than the standard DPA, especially when high output power levels are required. The innovative design approach is demonstrated through a practical prototype realization based on GaN-HEMT devices. Experimental results have shown a 65%-48% efficiency at about 42-36 dBm output power with a gain compression lower than 1.5 dB from 1.95 to 2.25 GHz.
Keywords :
III-V semiconductors; UHF power amplifiers; gallium compounds; high electron mobility transistors; network topology; wide band gap semiconductors; Doherty power amplifier; GaN; HEMT device-based practical prototype realization; active load modulation; frequency 1.95 GHz to 2.25 GHz; gain compression; high output power levels; output combining network; output matching; standard DPA; Gain; Impedance; Modulation; Power generation; Standards; Topology; Wireless communication; Doherty power amplifier (DPA); GaN; WiMAX;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2012.2236308
Filename :
6400265
Link To Document :
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