• DocumentCode
    1110644
  • Title

    IIIA-1 a self-aligned emitter-base contact technique for AlGaAs/GaAs heterojunction bipolar transistors

  • Author

    Morizuka, K. ; Tsuda, Kazuhiko ; Kobayashi, Takehiko ; Azuma, Masaki

  • Volume
    33
  • Issue
    11
  • fYear
    1986
  • fDate
    11/1/1986 12:00:00 AM
  • Firstpage
    1843
  • Lastpage
    1844
  • Keywords
    Bipolar transistors; Electrodes; Etching; Gallium arsenide; Heterojunction bipolar transistors; Photonic band gap; Propagation delay; Radiative recombination; Resists; Ring oscillators;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22773
  • Filename
    1485990
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1110644