DocumentCode :
1110644
Title :
IIIA-1 a self-aligned emitter-base contact technique for AlGaAs/GaAs heterojunction bipolar transistors
Author :
Morizuka, K. ; Tsuda, Kazuhiko ; Kobayashi, Takehiko ; Azuma, Masaki
Volume :
33
Issue :
11
fYear :
1986
fDate :
11/1/1986 12:00:00 AM
Firstpage :
1843
Lastpage :
1844
Keywords :
Bipolar transistors; Electrodes; Etching; Gallium arsenide; Heterojunction bipolar transistors; Photonic band gap; Propagation delay; Radiative recombination; Resists; Ring oscillators;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22773
Filename :
1485990
Link To Document :
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