DocumentCode
1110654
Title
IIIA-3 comparison of compositionally abrupt and graded emitter-base junctions in the heterojunction bipolar transistor
Author
Enquist, P.M. ; Ramberg, L.P. ; Eastman, L.F.
Volume
33
Issue
11
fYear
1986
fDate
11/1/1986 12:00:00 AM
Firstpage
1844
Lastpage
1844
Keywords
Degradation; Doping; Electroluminescent devices; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Physics; Spontaneous emission; Temperature; Thickness measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22774
Filename
1485991
Link To Document