Title :
IIIA-3 comparison of compositionally abrupt and graded emitter-base junctions in the heterojunction bipolar transistor
Author :
Enquist, P.M. ; Ramberg, L.P. ; Eastman, L.F.
fDate :
11/1/1986 12:00:00 AM
Keywords :
Degradation; Doping; Electroluminescent devices; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Physics; Spontaneous emission; Temperature; Thickness measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22774
