DocumentCode
1110666
Title
IIIA-2 Simulation and analysis of recombination and grading effects in GaAlAs/GaAs HBT´s
Author
Tiwari, Sunita ; Frank, David J.
Volume
33
Issue
11
fYear
1986
fDate
11/1/1986 12:00:00 AM
Firstpage
1844
Lastpage
1844
Keywords
Analytical models; Degradation; Doping; Electroluminescent devices; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Spontaneous emission; Temperature; Thickness measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22775
Filename
1485992
Link To Document