• DocumentCode
    1110679
  • Title

    IIIA-4 GaAs inversion-base bipolar transistor (GaAs IBT)

  • Author

    Matsumoto, Kaname ; Hayashi, Yasuhiro ; Hashizume, Nobuya ; Kato, Masaaki ; Miyashita, Tadakazu ; Fukuhara, N.

  • Volume
    33
  • Issue
    11
  • fYear
    1986
  • fDate
    11/1/1986 12:00:00 AM
  • Firstpage
    1845
  • Lastpage
    1845
  • Keywords
    Annealing; Bipolar transistors; Conductivity; Doping; Electrodes; Electrons; Fabrication; Gallium arsenide; Laboratories; Ohmic contacts;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22776
  • Filename
    1485993
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1110679