• DocumentCode
    1110688
  • Title

    IIIA-5 AlGaAs/GaAs heterostructure bipolar transistor with nonalloyed graded-gap ohmic contacts to the base and emitter

  • Author

    Rao, Muhammad Anwer ; Long, S.I. ; Kroemer, H.

  • Volume
    33
  • Issue
    11
  • fYear
    1986
  • fDate
    11/1/1986 12:00:00 AM
  • Firstpage
    1845
  • Lastpage
    1845
  • Keywords
    Bipolar transistors; Conductivity; Contact resistance; Doping; Electron mobility; Gallium arsenide; Heterojunction bipolar transistors; Metallization; Molecular beam epitaxial growth; Ohmic contacts;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22777
  • Filename
    1485994
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1110688