• DocumentCode
    1110695
  • Title

    IIIA-6 high-frequency performance of AlGaAs/InGaAs/GaAs strained layer heterojunction bipolar transistors

  • Author

    Sullivan, G.J. ; Asbeck, P.M. ; Chang, M.F. ; Miller, Douglas L. ; Wang, K.C.

  • Volume
    33
  • Issue
    11
  • fYear
    1986
  • fDate
    11/1/1986 12:00:00 AM
  • Firstpage
    1845
  • Lastpage
    1846
  • Keywords
    Bipolar transistors; Doping; Electron mobility; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Molecular beam epitaxial growth; Power dissipation; Propagation delay; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22778
  • Filename
    1485995
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1110695