Title :
IIIA-7 fabrication and characterization of InGaAs/InAlAs abrupt double heterojunction bipolar transistors
Author :
Wai Lee ; Fonstad, C.G.
fDate :
11/1/1986 12:00:00 AM
Keywords :
Circuits; Current measurement; Design optimization; Double heterojunction bipolar transistors; Fabrication; Gain measurement; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Semiconductor diodes;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22779
