Title :
Low threshold current density InGaAs surface-emitting lasers with periodic gain active structure
Author :
Yoo, Bum-Soo ; Park, Hyun-Hee ; Lee, E.-H.
Author_Institution :
Electron. & Telecommun. Res. Inst., Taejon
fDate :
6/23/1994 12:00:00 AM
Abstract :
The authors have obtained very low threshold current densities for InGaAs vertical-cavity surface-emitting lasers using a periodic gain active structure. For a 40 μm diameter device, the threshold current density for room-temperature CW operation was as low as 380 A/cm2 with light output power of more than 11 mW
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; laser cavity resonators; semiconductor lasers; 11 mW; 40 mum; InGaAs; light output power; low threshold current densities; low threshold current density; periodic gain active structure; room-temperature CW operation; surface-emitting lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940719
