Monolithically integrated dual-lock-in optical sensor

Author

Davidovic, M. ; Seiter, J. ; Hofbauer, Michael ; Gaberl, Wolfgang ; Zimmermann, Horst

Author_Institution

Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria

Volume

50

Issue

4

fYear

2014

fDate

February 13 2014

Firstpage

306

Lastpage

308

Abstract

A single-pixel sensor consisting of a dual-lock-in amplifier with an innovative dual-cathode photodetector is presented. The sensor is fabricated in 0.35 μm CMOS and is designed to be integrated in a multipixel array working with a frequency shifted feedback (FSF) laser. The realised single-pixel structure occupies an area of 120 × 100 μm² at a 58% fill factor. This pixel ensures frequency detection of the optical signal independently of its phase and power. The bandwidth of the interleaved pin photodiodes is larger than 100 MHz even for 850 nm. The sensor shows a dynamic range of ~24 dB at a modulation frequency of 10 MHz. Signals up to 35 MHz can be detected.

Keywords

CMOS analogue integrated circuits; cathodes; feedback amplifiers; frequency modulation; integrated circuit design; integrated circuit manufacture; integrated circuit technology; laser feedback; monolithic integrated circuits; optical sensors; p-i-n photodiodes; photodetectors; radiofrequency amplifiers; radiofrequency integrated circuits; signal detection; CMOS process; FSF laser; dual-lock-in amplifier; frequency 10 MHz; frequency detection; frequency shifted feedback laser; innovative dual-cathode photodetector; interleaved PIN photodiode; monolithically integrated dual-lock-in optical sensor; optical signal detection; single-pixel sensor; size 0.35 mum; size 850 nm;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2013.3575

Filename

6746298