Title :
Monolithically integrated dual-lock-in optical sensor
Author :
Davidovic, M. ; Seiter, J. ; Hofbauer, Michael ; Gaberl, Wolfgang ; Zimmermann, Horst
Author_Institution :
Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria
Abstract :
A single-pixel sensor consisting of a dual-lock-in amplifier with an innovative dual-cathode photodetector is presented. The sensor is fabricated in 0.35 μm CMOS and is designed to be integrated in a multipixel array working with a frequency shifted feedback (FSF) laser. The realised single-pixel structure occupies an area of 120 × 100 μm2 at a 58% fill factor. This pixel ensures frequency detection of the optical signal independently of its phase and power. The bandwidth of the interleaved pin photodiodes is larger than 100 MHz even for 850 nm. The sensor shows a dynamic range of ~24 dB at a modulation frequency of 10 MHz. Signals up to 35 MHz can be detected.
Keywords :
CMOS analogue integrated circuits; cathodes; feedback amplifiers; frequency modulation; integrated circuit design; integrated circuit manufacture; integrated circuit technology; laser feedback; monolithic integrated circuits; optical sensors; p-i-n photodiodes; photodetectors; radiofrequency amplifiers; radiofrequency integrated circuits; signal detection; CMOS process; FSF laser; dual-lock-in amplifier; frequency 10 MHz; frequency detection; frequency shifted feedback laser; innovative dual-cathode photodetector; interleaved PIN photodiode; monolithically integrated dual-lock-in optical sensor; optical signal detection; single-pixel sensor; size 0.35 mum; size 850 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2013.3575
