DocumentCode
1110763
Title
IIIB-6 the dependence of MOSFET output resistance on drain doping profiles
Author
Fu-Chieh Hsu
Volume
33
Issue
11
fYear
1986
fDate
11/1/1986 12:00:00 AM
Firstpage
1848
Lastpage
1849
Keywords
CMOS process; Circuit simulation; Doping profiles; Integrated circuit interconnections; MOSFET circuits; Semiconductor process modeling; Silicides; Tin; Titanium; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22784
Filename
1486001
Link To Document