Very high characteristic temperature and constant differential quantum efficiency 1.3 μm GaInAsP/InP strained-layer quantum well lasers by use of temperature dependent reflectivity (TDR) mirror

Author

Kasukawa, A. ; Iwai, N. ; Yamanaka, N.

Author_Institution

Furukawa Electr. Co. Ltd., Yokohama

Volume

30

Issue

13

fYear

1994

fDate

6/23/1994 12:00:00 AM

Firstpage

1064

Lastpage

1065

Abstract

A very high characteristic temperature of 150K (25-70°C) or 450K (25-50°C) and almost constant differential quantum efficiency operation were achieved in 1.3 μm GaInAsP/InP strained-layer quantum well lasers by the use of a novel temperature dependent reflectivity mirror composed of multiple quarter-wavelength thickness a-Si/SiO_x dielectric films with quarter-wavelength shift in the centre

Keywords

Debye temperature; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser accessories; mirrors; semiconductor lasers; 1.3 mum; 150 K; 450 K; GaInAsP-InP; GaInAsP/InP; a-Si/SiO_x dielectric films; constant differential quantum efficiency; constant differential quantum efficiency operation; mirror; multiple quarter-wavelength thickness; quarter-wavelength shift; strained-layer quantum well lasers; temperature dependent reflectivity; temperature dependent reflectivity mirror; very high characteristic temperature;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19940743

Filename

294801