Title :
IIIB-4 shallow junction formation for CMOS VLSI application using Tin preamorphization
Author :
Molnar, B. ; Dietrich, H.B.
fDate :
11/1/1986 12:00:00 AM
Keywords :
Boron; Capacitive sensors; Etching; Implants; Laboratories; Lithography; Rapid thermal annealing; Silicon; Tin; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22786
