IIIB-8 titanium disilicide contact resistivity and its impact on 1-µm CMOS circuit performance

Author

Scott, David B. ; Chapman, R.A. ; Wei, C.C. ; Mahant-Shetti, S. ; Haken, R.A. ; Holloway

Volume

Issue

fYear

1986

fDate

11/1/1986 12:00:00 AM

Firstpage

1849

Lastpage

1850

Keywords

Annealing; Boron; Circuit optimization; Conductivity; Contact resistance; Gallium arsenide; Implants; Silicides; Temperature; Titanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1986.22787

Filename

1486004

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