DocumentCode :
1110797
Title :
IIIB-8 titanium disilicide contact resistivity and its impact on 1-µm CMOS circuit performance
Author :
Scott, David B. ; Chapman, R.A. ; Wei, C.C. ; Mahant-Shetti, S. ; Haken, R.A. ; Holloway
Volume :
33
Issue :
11
fYear :
1986
fDate :
11/1/1986 12:00:00 AM
Firstpage :
1849
Lastpage :
1850
Keywords :
Annealing; Boron; Circuit optimization; Conductivity; Contact resistance; Gallium arsenide; Implants; Silicides; Temperature; Titanium;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22787
Filename :
1486004
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1110797
