Title :
IIIB-7 a new local interconnect technique for VLSI submicrometer CMOS applications
fDate :
11/1/1986 12:00:00 AM
Keywords :
Annealing; CMOS process; CMOS technology; Dry etching; Silicides; Silicon; Tin; Titanium; Very large scale integration; Wet etching;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22788
