DocumentCode :
1110806
Title :
IIIB-7 a new local interconnect technique for VLSI submicrometer CMOS applications
Author :
Haken, R.A.
Volume :
33
Issue :
11
fYear :
1986
fDate :
11/1/1986 12:00:00 AM
Firstpage :
1849
Lastpage :
1849
Keywords :
Annealing; CMOS process; CMOS technology; Dry etching; Silicides; Silicon; Tin; Titanium; Very large scale integration; Wet etching;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22788
Filename :
1486005
Link To Document :
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