Title :
IVA-1 observation of the high-field dipole in GaAs MESFET channels
Author :
Abeles, J.H. ; Leheny, R.F. ; Chang, G.K. ; Allen, S. James
fDate :
11/1/1986 12:00:00 AM
Keywords :
Circuit optimization; Equivalent circuits; FETs; Frequency; Gallium arsenide; Geometry; MESFET circuits; Parasitic capacitance; Silicides; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22789
