DocumentCode
1110838
Title
Valence band mixing and optical emission in modulation-doped GaAs-(AlGa)As heterostructures
Author
Sooryakumar, R.
Author_Institution
Department of Physics, Ohio State Univ., Columbus, OH, USA
Volume
22
Issue
9
fYear
1986
fDate
9/1/1986 12:00:00 AM
Firstpage
1645
Lastpage
1648
Abstract
Unexpected optical emission spectra from electrons confined in GaAs quantum layers reveal a strong component with polarization normal to the plane of the layers. For elementary electron-hole recombination processes, this suggests surprisingly large band mixing in the ground valence subband. Effective mass theories that include conventional symmetry breaking mechanisms do not satisfactorily account for this phenomenon. The stress dependence of the spectra confirm that many body shake-up processes in the Fermi sea are important in describing emission associated with the 2D electron plasma.
Keywords
Gallium materials/devices; Optical spectroscopy; Semiconductor plasmas; Electron emission; Electron optics; Epitaxial layers; Gallium arsenide; Optical devices; Optical mixing; Optical modulation; Optical polarization; Potential well; Stimulated emission;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1986.1073161
Filename
1073161
Link To Document