DocumentCode :
1110838
Title :
Valence band mixing and optical emission in modulation-doped GaAs-(AlGa)As heterostructures
Author :
Sooryakumar, R.
Author_Institution :
Department of Physics, Ohio State Univ., Columbus, OH, USA
Volume :
22
Issue :
9
fYear :
1986
fDate :
9/1/1986 12:00:00 AM
Firstpage :
1645
Lastpage :
1648
Abstract :
Unexpected optical emission spectra from electrons confined in GaAs quantum layers reveal a strong component with polarization normal to the plane of the layers. For elementary electron-hole recombination processes, this suggests surprisingly large band mixing in the ground valence subband. Effective mass theories that include conventional symmetry breaking mechanisms do not satisfactorily account for this phenomenon. The stress dependence of the spectra confirm that many body shake-up processes in the Fermi sea are important in describing emission associated with the 2D electron plasma.
Keywords :
Gallium materials/devices; Optical spectroscopy; Semiconductor plasmas; Electron emission; Electron optics; Epitaxial layers; Gallium arsenide; Optical devices; Optical mixing; Optical modulation; Optical polarization; Potential well; Stimulated emission;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1986.1073161
Filename :
1073161
Link To Document :
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