• DocumentCode
    1110838
  • Title

    Valence band mixing and optical emission in modulation-doped GaAs-(AlGa)As heterostructures

  • Author

    Sooryakumar, R.

  • Author_Institution
    Department of Physics, Ohio State Univ., Columbus, OH, USA
  • Volume
    22
  • Issue
    9
  • fYear
    1986
  • fDate
    9/1/1986 12:00:00 AM
  • Firstpage
    1645
  • Lastpage
    1648
  • Abstract
    Unexpected optical emission spectra from electrons confined in GaAs quantum layers reveal a strong component with polarization normal to the plane of the layers. For elementary electron-hole recombination processes, this suggests surprisingly large band mixing in the ground valence subband. Effective mass theories that include conventional symmetry breaking mechanisms do not satisfactorily account for this phenomenon. The stress dependence of the spectra confirm that many body shake-up processes in the Fermi sea are important in describing emission associated with the 2D electron plasma.
  • Keywords
    Gallium materials/devices; Optical spectroscopy; Semiconductor plasmas; Electron emission; Electron optics; Epitaxial layers; Gallium arsenide; Optical devices; Optical mixing; Optical modulation; Optical polarization; Potential well; Stimulated emission;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1986.1073161
  • Filename
    1073161