Title :
IVA-4 Suppression of deep-level trapping related effects in GaAs MESFET´s using a buried-channel structure
Author :
Canfield, P. ; Forbes, L. ; Gleason, R.
fDate :
11/1/1986 12:00:00 AM
Keywords :
Active noise reduction; Circuit noise; Conducting materials; Electron devices; Gallium arsenide; Implants; MESFET circuits; Noise generators; Semiconductor device noise; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22792
