Title :
1.55 μm vertical-cavity surface-emitting lasers with wafer-fused InGaAsP/lnP-GaAs/AlAs DBRs
Author :
Ohiso, Y. ; Amano, C. ; Itoh, Y. ; Tateno, K. ; Tadokoro, T. ; Takenouchi, H. ; Kurokawa, T.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
8/1/1996 12:00:00 AM
Abstract :
The authors propose a novel 1.55 μm vertical-cavity surface-emitting laser (VCSEL) structure with wafer-fused InGaAsP/lnP-GaAs/AlAs distributed Bragg reflectors. The resonant-cavity wavelength before wafer fusion is in exact accord with the emission wavelength, and a 25 μm diameter VCSEL exhibits CW operation at 27°C
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; optical fabrication; semiconductor lasers; surface emitting lasers; wafer bonding; 1.55 micron; 25 micron; 27 C; CW operation; InGaAsP-InP-GaAs-AlAs; InGaAsP/lnP-GaAs/AlAs DBR; VCSEL; distributed Bragg reflector; vertical-cavity surface-emitting laser; wafer fusion;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960960
