DocumentCode
1110876
Title
IVA-6 New high current drivability MIS-like FET´s utilizing a highly doped thin GaAs channel
Author
Hida, Hirotaka ; Okamoto, Atsushi ; Toyoshima, Hisashi ; Tahara, S. ; Ohata, Katsuki
Volume
33
Issue
11
fYear
1986
fDate
11/1/1986 12:00:00 AM
Firstpage
1852
Lastpage
1852
Keywords
1f noise; Electrons; FETs; Gallium arsenide; MESFETs; Microwave technology; Noise level; Noise reduction; Temperature distribution; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22795
Filename
1486012
Link To Document