DocumentCode

1110884

Title

IVA-7 GaAs FET´s with a flicker noise corner below 1 MHz

Author

Hughes, Brian

Volume

33

Issue

11

fYear

1986

fDate

11/1/1986 12:00:00 AM

Firstpage

1852

Lastpage

1852

Keywords

1f noise; FETs; Frequency; Gain; Gallium arsenide; MESFETs; Molecular beam epitaxial growth; Noise level; Noise reduction; Temperature distribution;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1986.22796

Filename

1486013