Title :
IVA-7 GaAs FET´s with a flicker noise corner below 1 MHz
fDate :
11/1/1986 12:00:00 AM
Keywords :
1f noise; FETs; Frequency; Gain; Gallium arsenide; MESFETs; Molecular beam epitaxial growth; Noise level; Noise reduction; Temperature distribution;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22796
