DocumentCode

1110907

Title

IVB-1 tunneling component in polysilicon self-aligned bipolar transistors

Author

Li, G.P. ; Chen, T.C.

Volume

33

Issue

11

fYear

1986

fDate

11/1/1986 12:00:00 AM

Firstpage

1853

Lastpage

1853

Keywords

Bipolar transistors; Circuits; Current measurement; Degradation; Diodes; Electron devices; Leakage current; Process control; Shape measurement; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1986.22798

Filename

1486015