Title :
IVB-1 tunneling component in polysilicon self-aligned bipolar transistors
Author :
Li, G.P. ; Chen, T.C.
fDate :
11/1/1986 12:00:00 AM
Keywords :
Bipolar transistors; Circuits; Current measurement; Degradation; Diodes; Electron devices; Leakage current; Process control; Shape measurement; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22798
