DocumentCode :
1110935
Title :
IVB-5 on-state characteristics of the MOS-controlled thyristor (MCT)
Author :
Temple, V.A.K. ; Pattanayak, Deva N.
Volume :
33
Issue :
11
fYear :
1986
fDate :
11/1/1986 12:00:00 AM
Firstpage :
1854
Lastpage :
1855
Keywords :
FETs; MOSFETs; Radiative recombination; Reflectivity; Silicon; Spontaneous emission; Surface texture; Testing; Thyristors; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22801
Filename :
1486018
Link To Document :
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