Title :
The fractional quantum hall effect
Author :
Tsui, D.C. ; Störmer, H.L.
Author_Institution :
Department of Electrical Engineering, Princeton Univ., Princeton, NJ, USA
fDate :
9/1/1986 12:00:00 AM
Abstract :
A review is given of the fractional quantum Hall effect with the emphasis placed on the basic experimental facts. Only a superficial description is made of the current theoretical understanding.
Keywords :
Bibliographies; Gallium materials/devices; Hall effect; Electrons; Gallium arsenide; Hall effect; Helium; Heterojunctions; Land surface temperature; Magnetic fields; Physics; Potential well; Stationary state;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1986.1073172
