DocumentCode :
1110994
Title :
Recent advances inultra-high-speed HEMT technology
Author :
Abe, Masayuki ; Mimura, Takashi ; Nishiuchi, Koichi ; Shibatomi, Akihiro ; Kobayashi, Masaaki
Author_Institution :
Fujitsu Laboratories Ltd., Atsugi, Japan
Volume :
22
Issue :
9
fYear :
1986
fDate :
9/1/1986 12:00:00 AM
Firstpage :
1870
Lastpage :
1879
Abstract :
Current status and recent advances in high electron mobility transistor (HEMT) technology for high-performance VLSI are presented with a focus on material, self-alignment device fabrication, and HEMT LSI implementations. HEMT is a very promising device for ultra-high-speed LSI/VLSI due to the supermobility GaAs/AlGaAs heterojunction structure. The technological challenges for large-scale integration are discussed with the refined HEMT with self-aligned gate structure, controllability of device parameters, and MBE material problems. Master-slave flip-flop divide-by-two circuits achieved an internal logic delay of 22 ps per gate at 77 K at a fan-out of about 2, roughly three times faster than that of GaAs MESFET technology. HEMT has already made it possible to develop a 4 kbit static RAM´s and 1.5 kgate gate array, demonstrating high-speed operations. With submicron gates, as well as advanced material technologies, a HEMT 64 kbit static RAM with subnanosecond access operation and 10 kgate logic LSI with subhundred-picosecond logic delays will be achieved.
Keywords :
MODFET logic circuits; MODFET memories; Delay; Fabrication; Gallium arsenide; HEMTs; Heterojunctions; Large scale integration; Logic; MODFETs; Refining; Very large scale integration;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1986.1073175
Filename :
1073175
Link To Document :
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