VA-2 Index guided phased array lasers that emit in an in-phase far field pattern

Summary form only given, as follows. A new distributed feedback (DFB) surface emitting laser diode with lateral double hetero (DH) structure was realized with a combination of MBE and selective LPE growth techniques. The fabrication procedures for this lateral DH structure are: 1) MBE growth of DFB type active layer which is made by stacking 50 pairs of alternate AlGaAs (64 nm)/GaAs(60 nm) layers; 2) Formation of etched grooves on the multilayer using SiNx film as a mask; 3) Selective LPE of p-type AlGaAs at the etched grooves; 4) Formation of the second etched grooves adjacent to the first ones leaving the multilayer width of 1-3 p.m; and 5) Selective LPE of n-type AlGaAs at the second etched grooves. In this structure, MBE grown AlGaAs/GaAs multilayer is sandwiched laterally by p- and n-type AlGaAs cladded layers, such that lateral carrier injection and carrier confinement are achieved. At the same time, laser length of the SELD is no more restricted to the carrier diffusion length because optical cavity is perpendicular to the flow of current injection. This lateral DH structure has a normal/-V characteristics with a reverse breakdown voltage of -30 V and a turn-on voltage of 1.4 V. Stimulated emission with a spectrum width of 2-3 nm was observed at the operation current of 150 rnA at -50°C and 500 mA at room temperature.