DocumentCode :
1111007
Title :
Response time measurement of a mid-infrared photodetector
Author :
de Barros, M.R.X. ; Becker, P.C. ; Miranda, R.S. ; West ; Dunkel, Jens ; Swaminathan, Viswanathan
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ
Volume :
30
Issue :
13
fYear :
1994
fDate :
6/23/1994 12:00:00 AM
Firstpage :
1093
Lastpage :
1094
Abstract :
A direct measurement of the speed of a GaAs/Al0.2Ga0.8As quantum well infra-red photodetector is made using fast pulses centred at 9.7 μm. The electrical response of the detector has rise and decay times of less than 95 ps and the FWHM is 115 ps
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; infrared detectors; multiwave mixing; photodetectors; semiconductor device testing; semiconductor quantum wells; 115 ps; 9.7 mum; 95 ps; GaAs-Al0.2Ga0.8As; GaAs/Al0.2Ga0.8As quantum well; decay times; direct measurement; electrical response; mid-IR photodetector; nonlinear mixing of visible beams; response time measurement; rise times;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940708
Filename :
294821
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1111007
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