DocumentCode :
1111017
Title :
Dependence of electron temperature on well width in the Al0.48 In0.52 As/Ga0.47 In0.53 As single-quantum well
Author :
Shum, K. ; Ho, P.P. ; Alfano, R.R. ; Welch, D.F. ; Wicks, G.W. ; Eastman, L.F.
Author_Institution :
Institute for Ultrafast Spectroscopy and Lasers, Departments of Physics and Electrical Engineering, City College of New York, New York
Volume :
22
Issue :
9
fYear :
1986
fDate :
9/1/1986 12:00:00 AM
Firstpage :
1811
Lastpage :
1815
Abstract :
The temperature of electrons confined in a single quantum well (SQW) as a function of well width (Lz ) from 
Å to 
Å have been determined from photoluminescence spectra of a set of undoped (Al,In)As/(Ga,In)As SQW\´s. From steady state electron temperature variation with Lz it is shown that the electron and longitudinal optical phonon scattering dominates the excess energy loss of the thermalized two dimensional electrons in the SQW\´s and the scattering rate is independent of Lz within our experimental accuracy. The average energy loss rate per hot-electron was determined to be much smaller than expected.
Å to Å have been determined from photoluminescence spectra of a set of undoped (Al,In)As/(Ga,In)As SQW\´s. From steady state electron temperature variation with LKeywords :
Gallium materials/devices; Quantum-well device; Charge carrier density; Electron optics; Energy loss; Optical scattering; Particle scattering; Phonons; Photoluminescence; Steady-state; Temperature dependence; Ultrafast optics;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1986.1073177
Filename :
1073177
Link To Document :
