DocumentCode
1111017
Title
Dependence of electron temperature on well width in the Al0.48 In0.52 As/Ga0.47 In0.53 As single-quantum well
Author
Shum, K. ; Ho, P.P. ; Alfano, R.R. ; Welch, D.F. ; Wicks, G.W. ; Eastman, L.F.
Author_Institution
Institute for Ultrafast Spectroscopy and Lasers, Departments of Physics and Electrical Engineering, City College of New York, New York
Volume
22
Issue
9
fYear
1986
fDate
9/1/1986 12:00:00 AM
Firstpage
1811
Lastpage
1815
Abstract
The temperature of electrons confined in a single quantum well (SQW) as a function of well width (Lz ) from 
Å to 
Å have been determined from photoluminescence spectra of a set of undoped (Al,In)As/(Ga,In)As SQW\´s. From steady state electron temperature variation with Lz it is shown that the electron and longitudinal optical phonon scattering dominates the excess energy loss of the thermalized two dimensional electrons in the SQW\´s and the scattering rate is independent of Lz within our experimental accuracy. The average energy loss rate per hot-electron was determined to be much smaller than expected.
Å to Å have been determined from photoluminescence spectra of a set of undoped (Al,In)As/(Ga,In)As SQW\´s. From steady state electron temperature variation with LKeywords
Gallium materials/devices; Quantum-well device; Charge carrier density; Electron optics; Energy loss; Optical scattering; Particle scattering; Phonons; Photoluminescence; Steady-state; Temperature dependence; Ultrafast optics;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1986.1073177
Filename
1073177
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