Analysis of novel resonant electron transfer triode device using metal-insulator superlattice for high speed response

Author

Nakata, Yasuyuki ; Asada, Masahiro ; Suematsu, Yasuharu

Author_Institution

Tokyo institute of technology, Japan - 1986

Volume

22

Issue

9

fYear

1986

fDate

9/1/1986 12:00:00 AM

Firstpage

1880

Lastpage

1886

Abstract

A novel resonant electron transfer triode (RETT), which uses electron resonant tunneling utilizing a metal insulator multilayer superlattice as an artificial semiconductor, is proposed and its basic properties are estimated theoretically. Possibility for high speed response in room temperature, such as response time $\\tau = 0.25-0.38$ ps, cutoff frequency $f_{T} = 420-640$ GHz, maximum oscillation frequency $f_{\\max } = 530-610$ GHz, and the common-emmitter current gain $\\beta = 8- 34$ are expected theoretically with the transverse area of 1000 × 1000 Å²and the total base length of 30-100 Å. It is also shown theoretically that this triode has common transistor static characteristics.

Keywords

Bipolar transistor amplifiers; Metal-insulator structures; Resonance; Submillimeter-wave amplifiers; Superlattices; Tunnel devices/effects; Cutoff frequency; Electrons; Estimation theory; Insulation; Metal-insulator structures; Metallic superlattices; Nonhomogeneous media; Resonance; Resonant tunneling devices; Semiconductor superlattices;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1986.1073178

Filename

1073178