Title :
VA-7 low-threshold, high-T0InGaAsP/InP 1.3-µm lasers grown on p-type InP substrates with a three-melt technique
Author :
Hasenberg, T.C. ; Garmire, E.
fDate :
11/1/1986 12:00:00 AM
Keywords :
Carrier confinement; Cooling; Diode lasers; Electrons; Hot carriers; Indium phosphide; Scattering; Spontaneous emission; Temperature dependence; Threshold current;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22810
