Title :
High performance ZnSe photoconductors
Author :
Huang, Z.C. ; Wie, C.K. ; Na, I. ; Luo, H. ; Mott, D.B. ; Shu, P.K.
Author_Institution :
Hughes STX Corp., MD, USA
fDate :
8/1/1996 12:00:00 AM
Abstract :
A high-quality metal-semiconductor-metal photoconductive detector has been fabricated on semi-insulating ZnSe grown by molecular beam epitaxy. The detector has a responsivity of 320 A/W at 480 nm under an applied bias of 10 V, and a response time of 2.3 ms
Keywords :
II-VI semiconductors; metal-semiconductor-metal structures; molecular beam epitaxial growth; photoconducting devices; photoconducting materials; photodetectors; semiconductor growth; zinc compounds; 10 V; 2.3 ms; 480 nm; MBE; MSM device; ZnSe; ZnSe photoconductors; metal-semiconductor-metal device; molecular beam epitaxy; photoconductive detector; semi-insulating ZnSe;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960971
