DocumentCode
1111044
Title
High performance ZnSe photoconductors
Author
Huang, Z.C. ; Wie, C.K. ; Na, I. ; Luo, H. ; Mott, D.B. ; Shu, P.K.
Author_Institution
Hughes STX Corp., MD, USA
Volume
32
Issue
16
fYear
1996
fDate
8/1/1996 12:00:00 AM
Firstpage
1507
Lastpage
1509
Abstract
A high-quality metal-semiconductor-metal photoconductive detector has been fabricated on semi-insulating ZnSe grown by molecular beam epitaxy. The detector has a responsivity of 320 A/W at 480 nm under an applied bias of 10 V, and a response time of 2.3 ms
Keywords
II-VI semiconductors; metal-semiconductor-metal structures; molecular beam epitaxial growth; photoconducting devices; photoconducting materials; photodetectors; semiconductor growth; zinc compounds; 10 V; 2.3 ms; 480 nm; MBE; MSM device; ZnSe; ZnSe photoconductors; metal-semiconductor-metal device; molecular beam epitaxy; photoconductive detector; semi-insulating ZnSe;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960971
Filename
511927
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