• DocumentCode
    1111077
  • Title

    Dielectric relaxation as a limit on transistor switching speed

  • Author

    Ladbrooke, P.H. ; Carroll, J.E.

  • Author_Institution
    GaAs Code Ltd., Cambridge, UK
  • Volume
    32
  • Issue
    16
  • fYear
    1996
  • fDate
    8/1/1996 12:00:00 AM
  • Firstpage
    1511
  • Lastpage
    1513
  • Abstract
    Charge re-arrangement in a semiconductor device by the process of dielectric relaxation is re-examined accounting for carrier inertia. Where the length of the control region in contemporary transistors is of the order of 0.1 μm, dielectric relaxation, not transit time, is likely to be the frequency-limiting mechanism
  • Keywords
    dielectric relaxation; electric charge; semiconductor switches; switching; transistors; carrier inertia; charge re-arrangement; dielectric relaxation; frequency-limiting mechanism; semiconductor device; transistor switching speed;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960967
  • Filename
    511930
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1111077