Title :
Subnanosecond 300 V diffused step recovery diode
Author :
Chudobiak, M.J. ; Walkey, D.J.
Author_Institution :
Avtech Electrosyst. Ltd., Ottawa, Ont., Canada
fDate :
8/1/1996 12:00:00 AM
Abstract :
A novel diffused step recovery diode structure is presented, which can operate with reverse voltages of several hundred volts and which exhibits long lifetimes of several microseconds. Experimental results for fabricated devices are presented for 300 V operation into a 50 Ω load, with 1.7 ns (typical) and 0.9 ns (best-case) transition times
Keywords :
charge storage diodes; doping profiles; electric breakdown; semiconductor switches; 0.9 to 1.7 ns; 300 V; SRD; breakdown voltage; charge storage diodes; diffused Gaussian doping structure; diffused step recovery diode; subnanosecond operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960987
