DocumentCode :
1111105
Title :
Thermal effects in HBT emitter resistance extraction
Author :
Hanington, G. ; Chang, C.E. ; Zampardi, P.J. ; Asbeck, P.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Volume :
32
Issue :
16
fYear :
1996
fDate :
8/1/1996 12:00:00 AM
Firstpage :
1515
Lastpage :
1516
Abstract :
It is shown that device self-heating effects introduce a significant error in the determination of emitter resistance in AlGaAs-GaAs HBTs by the common technique of extrapolating 1/gm against 1/lc (where gm is the observed device transconductance). An approximate expression for the error is given, and an improved technique for Re extraction is presented
Keywords :
III-V semiconductors; aluminium compounds; electric resistance; errors; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; AlGaAs-GaAs; AlGaAs-GaAs HBTs; HBT emitter resistance extraction; device self-heating effects; device transconductance; error; thermal effects;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19961017
Filename :
511932
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1111105
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