• DocumentCode
    1111115
  • Title

    Electronic states in semiconductor heterostructures

  • Author

    Bastard, G. ; Brum, J.A.

  • Author_Institution
    Groupe de Physique des Solides de ĺEcole Normale Supérieure, Paris Cédex, France
  • Volume
    22
  • Issue
    9
  • fYear
    1986
  • fDate
    9/1/1986 12:00:00 AM
  • Firstpage
    1625
  • Lastpage
    1644
  • Abstract
    This paper describes the electronic energy levels of semiconductor heterostructures within the envelope function scheme. Quantum well and superlattice electronic states are calculated and discussed, especially the in-plane dispersion relations. The Coulombic bound states in heterostructures (impurities, excitons) are then discussed. Finally, we present a brief overview of the effect of a static electric field on the carrier and exciton energy levels in semiconductor quantum wells.
  • Keywords
    Bibliographies; Gallium materials/devices; Semiconductor heterojunctions; Superlattices; Dispersion; Energy states; Excitons; Function approximation; Heterojunctions; Lattices; Semiconductor impurities; Semiconductor materials; Semiconductor superlattices; Tensile stress;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1986.1073186
  • Filename
    1073186