DocumentCode :
1111115
Title :
Electronic states in semiconductor heterostructures
Author :
Bastard, G. ; Brum, J.A.
Author_Institution :
Groupe de Physique des Solides de ĺEcole Normale Supérieure, Paris Cédex, France
Volume :
22
Issue :
9
fYear :
1986
fDate :
9/1/1986 12:00:00 AM
Firstpage :
1625
Lastpage :
1644
Abstract :
This paper describes the electronic energy levels of semiconductor heterostructures within the envelope function scheme. Quantum well and superlattice electronic states are calculated and discussed, especially the in-plane dispersion relations. The Coulombic bound states in heterostructures (impurities, excitons) are then discussed. Finally, we present a brief overview of the effect of a static electric field on the carrier and exciton energy levels in semiconductor quantum wells.
Keywords :
Bibliographies; Gallium materials/devices; Semiconductor heterojunctions; Superlattices; Dispersion; Energy states; Excitons; Function approximation; Heterojunctions; Lattices; Semiconductor impurities; Semiconductor materials; Semiconductor superlattices; Tensile stress;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1986.1073186
Filename :
1073186
Link To Document :
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