Title :
Electronic states in semiconductor heterostructures
Author :
Bastard, G. ; Brum, J.A.
Author_Institution :
Groupe de Physique des Solides de ĺEcole Normale Supérieure, Paris Cédex, France
fDate :
9/1/1986 12:00:00 AM
Abstract :
This paper describes the electronic energy levels of semiconductor heterostructures within the envelope function scheme. Quantum well and superlattice electronic states are calculated and discussed, especially the in-plane dispersion relations. The Coulombic bound states in heterostructures (impurities, excitons) are then discussed. Finally, we present a brief overview of the effect of a static electric field on the carrier and exciton energy levels in semiconductor quantum wells.
Keywords :
Bibliographies; Gallium materials/devices; Semiconductor heterojunctions; Superlattices; Dispersion; Energy states; Excitons; Function approximation; Heterojunctions; Lattices; Semiconductor impurities; Semiconductor materials; Semiconductor superlattices; Tensile stress;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1986.1073186