• DocumentCode
    1111117
  • Title

    Ultralinear double pulse doped AlInAs/GalnAs/lnP HEMTs

  • Author

    Hur, K.Y. ; McTaggart, R.A. ; Hoke, W.E.

  • Author_Institution
    Adv. Device Center, Raytheon Co., Andover, MA
  • Volume
    32
  • Issue
    16
  • fYear
    1996
  • fDate
    8/1/1996 12:00:00 AM
  • Firstpage
    1516
  • Lastpage
    1518
  • Abstract
    Highly linear InP-based HEMTs have been obtained for the first time by optimising the pulse profile of a double pulse doped AlInAs/GaInAs/InP layer structure. The two-tone measurements performed at f1=4.5 GHz and f2=4.51 GHz yielded a third-order intercept (IP3) of 31.5 dBm on a 50 μm-wide InP HEMT device. The linearity figure of merit (LFOM), defined as IP3/Pdc , was 41
  • Keywords
    III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; 4.5 GHz; 50 micron; AlInAs-GaInAs-InP; highly linear InP-based HEMTs; linearity figure of merit; pulse profile optimisation; third-order intercept; two-tone measurements; ultralinear double pulse doped HEMT;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961002
  • Filename
    511933
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1111117