Title :
Ultralinear double pulse doped AlInAs/GalnAs/lnP HEMTs
Author :
Hur, K.Y. ; McTaggart, R.A. ; Hoke, W.E.
Author_Institution :
Adv. Device Center, Raytheon Co., Andover, MA
fDate :
8/1/1996 12:00:00 AM
Abstract :
Highly linear InP-based HEMTs have been obtained for the first time by optimising the pulse profile of a double pulse doped AlInAs/GaInAs/InP layer structure. The two-tone measurements performed at f1=4.5 GHz and f2=4.51 GHz yielded a third-order intercept (IP3) of 31.5 dBm on a 50 μm-wide InP HEMT device. The linearity figure of merit (LFOM), defined as IP3/Pdc , was 41
Keywords :
III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; 4.5 GHz; 50 micron; AlInAs-GaInAs-InP; highly linear InP-based HEMTs; linearity figure of merit; pulse profile optimisation; third-order intercept; two-tone measurements; ultralinear double pulse doped HEMT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961002
