Title :
Electronic mobility in semiconductor heterostructures
Author_Institution :
IMB Thomas J. Watson Research Center, Yorktown-heights, NY, USA
fDate :
9/1/1986 12:00:00 AM
Abstract :
Recent developments in the study of the electronic mobility of two-dimensional (2-D) systems in semiconductor heterostructures are reviewed. The emphasis is on a comparison between theories and experimental data on the mobilities of 2-D electrons and holes in GaAs-Ga1-xAlxAs heterojunctions.
Keywords :
Gallium materials/devices; Charge carrier processes; Doping; Electron mobility; Epitaxial layers; Helium; Heterojunctions; Impurities; Molecular beam epitaxial growth; Scattering parameters; Two dimensional displays;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1986.1073191
