• DocumentCode
    1111174
  • Title

    Electronic mobility in semiconductor heterostructures

  • Author

    Mendez, E.E.

  • Author_Institution
    IMB Thomas J. Watson Research Center, Yorktown-heights, NY, USA
  • Volume
    22
  • Issue
    9
  • fYear
    1986
  • fDate
    9/1/1986 12:00:00 AM
  • Firstpage
    1720
  • Lastpage
    1727
  • Abstract
    Recent developments in the study of the electronic mobility of two-dimensional (2-D) systems in semiconductor heterostructures are reviewed. The emphasis is on a comparison between theories and experimental data on the mobilities of 2-D electrons and holes in GaAs-Ga1-xAlxAs heterojunctions.
  • Keywords
    Gallium materials/devices; Charge carrier processes; Doping; Electron mobility; Epitaxial layers; Helium; Heterojunctions; Impurities; Molecular beam epitaxial growth; Scattering parameters; Two dimensional displays;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1986.1073191
  • Filename
    1073191
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1111174